Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1-x/SiO2 heterostructures investigated by positron annihilation spectroscopy

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorMadia, O.en_US
dc.contributor.authorSegercrantz, N.en_US
dc.contributor.authorAfanasjev, V.en_US
dc.contributor.authorStesmans, A.en_US
dc.contributor.authorSouriau, L.en_US
dc.contributor.authorSlotte, J.en_US
dc.contributor.authorTuomisto, F.en_US
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.groupauthorAntimatter and Nuclear Engineeringen
dc.date.accessioned2018-08-21T13:48:28Z
dc.date.available2018-08-21T13:48:28Z
dc.date.issued2014-11en_US
dc.description| openaire: EC/FP7/261868/EU//MORDRED
dc.description.versionPeer revieweden
dc.format.extent5
dc.identifier.citationMadia, O, Segercrantz, N, Afanasjev, V, Stesmans, A, Souriau, L, Slotte, J & Tuomisto, F 2014, 'Charge transition level of GeP b1 centers at interfaces of SiO 2 /Ge x Si 1-x /SiO 2 heterostructures investigated by positron annihilation spectroscopy', Physica Status Solidi. B: Basic Research, vol. 251, no. 11, pp. 2211-2215. https://doi.org/10.1002/pssb.201400040en
dc.identifier.doi10.1002/pssb.201400040en_US
dc.identifier.issn0370-1972
dc.identifier.issn1521-3951
dc.identifier.otherPURE UUID: f815bc80-406f-4b12-a6d5-e465a628cc58en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/f815bc80-406f-4b12-a6d5-e465a628cc58en_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/33576
dc.identifier.urnURN:NBN:fi:aalto-201808214709
dc.language.isoenen
dc.publisherWiley
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/261868/EU//MORDREDen_US
dc.relation.ispartofseriesPhysica Status Solidi. B: Basic Researchen
dc.relation.ispartofseriesVolume 251, issue 11, pp. 2211-2215en
dc.rightsrestrictedAccessen
dc.subject.keyworddangling bonden_US
dc.subject.keywordGeen_US
dc.subject.keywordpositronen_US
dc.subject.keywordSiO2en_US
dc.titleCharge transition level of GePb1 centers at interfaces of SiO2/GexSi1-x/SiO2 heterostructures investigated by positron annihilation spectroscopyen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi

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