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Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1-x/SiO2 heterostructures investigated by positron annihilation spectroscopy
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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5
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Physica Status Solidi. B: Basic Research, Volume 251, issue 11, pp. 2211-2215
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| openaire: EC/FP7/261868/EU//MORDRED
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Madia, O, Segercrantz, N, Afanasjev, V, Stesmans, A, Souriau, L, Slotte, J & Tuomisto, F 2014, 'Charge transition level of GeP b1 centers at interfaces of SiO 2 /Ge x Si 1-x /SiO 2 heterostructures investigated by positron annihilation spectroscopy', Physica Status Solidi. B: Basic Research, vol. 251, no. 11, pp. 2211-2215. https://doi.org/10.1002/pssb.201400040