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Preventing light-induced degradation in multicrystalline silicon
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Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors
Lindroos, Jeanette
Boulfrad, Yacine
Yli-Koski, Marko
Savin, Hele
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en
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5
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Volume 115, Number 15, Journal of Applied Physics
Abstract
Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.
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Lindroos, Jeanette & Boulfrad, Yacine & Yli-Koski, Marko & Savin, Hele. 2014. Preventing light-induced degradation in multicrystalline silicon. Journal of Applied Physics. Volume 115, Number 15. 0021-8979 (printed). DOI: 10.1063/1.4871404.