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Observation of defect complexes containing Ga vacancies in GaAsN
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© 2003 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors
Toivonen, J.
Hakkarainen, T.
Sopanen, Markku
Lipsanen, Harri
Oila, J.
Saarinen, K.
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en
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40-42
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Applied Physics Letters, Volume 82, Issue 1
Abstract
Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 1018 cm−3 with increasing N composition and decreases after annealing at 700 °C. The anticorrelation of the vacancy concentration and the integrated photoluminescence intensity suggests that the Ga vacancy complexes act as nonradiative recombination centers.
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Toivonen, J. & Hakkarainen, T. & Sopanen, M. & Lipsanen, Harri & Oila, J. & Saarinen, K. 2003. Observation of defect complexes containing Ga vacancies in GaAsN. Applied Physics Letters. Volume 82, Issue 1. P. 40-42. ISSN 0003-6951 (printed). DOI: 10.1063/1.1533843.