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Ultra low 1/f noise in suspended bilayer graphene
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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5
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Applied Physics Letters, Volume 106, issue 26, pp. 1-5
Abstract
We have studied 1/f noise power SI in suspended bilayer graphene devices. Around the Dirac point, we observe ultra low noise amplitude on the order of f*SI/I2b=10−9 . The low frequency noise level is barely sensitive to intrinsic carrier density, but temperature and external doping are found to influence the noise power. In our current-annealed samples, the 1/f noise is dominated by resistance fluctuations at the contacts. Temperature dependence of the 1/f noise suggests the presence of trap states in the contact regions, with a nearly exponential distribution function displaying a characteristic energy of 0.12 eV. At 80 K, the noise displays an air pressure sensitivity that corresponds to ∼0.3 ppm gas detection sensitivity; this indicates the potential of suspended graphene as a platform for gas sensing applications.
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VK: Low Temperature Laboratory
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Kumar, M, Laitinen, A, Cox, D & Hakonen, P J 2015, 'Ultra low 1/f noise in suspended bilayer graphene', Applied Physics Letters, vol. 106, no. 26, 263505, pp. 1-5. https://doi.org/10.1063/1.4923190