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Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology
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A4 Artikkeli konferenssijulkaisussa
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en
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2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings, IEEE International Symposium on Circuits and Systems proceedings
Abstract
This paper presents a high dynamic range E-band power detector in a 0.13 µm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from -25 dBm to +10 dBm. It shows less than 1.6 dB offset in input power detection from 72 GHz to 82 GHz. This power detector consumes 0.6 mW of DC power and the occupied core area is 0.1 mm2
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Funding Information: The authors would like to thank the Academy of Finland for supporting this work through MilliRAD project. The work of M. Varonen was supported through the Academy of Finland Research Fellow project MIDERI (decision no 310234). Publisher Copyright: © 2020 IEEE
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Ahamed, R, Varonen, M, Parveg, D, Najmussadat, M, Kantanen, M & Halonen, K A I 2020, Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology. in 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings., 9181170, IEEE International Symposium on Circuits and Systems proceedings, IEEE, IEEE International Symposium on Circuits and Systems, Seville, Spain, 10/10/2020. https://doi.org/10.1109/ISCAS45731.2020.9181170